1. Product Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic made up of silicon and carbon atoms prepared in a tetrahedral lattice, largely in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing phenomenal atomic bond toughness.
The Si– C bond, with a bond power of around 318 kJ/mol, is amongst the greatest in structural porcelains, giving exceptional thermal stability, hardness, and resistance to chemical attack.
This robust covalent network causes a material with a melting point going beyond 2700 ° C(sublimes), making it among the most refractory non-oxide ceramics offered for high-temperature applications.
Unlike oxide ceramics such as alumina, SiC keeps mechanical stamina and creep resistance at temperature levels above 1400 ° C, where many steels and conventional ceramics begin to soften or degrade.
Its reduced coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) allows rapid thermal biking without disastrous cracking, a crucial feature for crucible efficiency.
These intrinsic buildings stem from the well balanced electronegativity and comparable atomic dimensions of silicon and carbon, which promote an extremely stable and largely packed crystal framework.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are usually made from sintered or reaction-bonded SiC powders, with microstructure playing a decisive function in toughness and thermal shock resistance.
Sintered SiC crucibles are created through solid-state or liquid-phase sintering at temperature levels above 2000 ° C, often with boron or carbon additives to enhance densification and grain boundary cohesion.
This procedure yields a completely dense, fine-grained framework with marginal porosity (
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